关键词200mil
- 标准
-
为您共找出"8"个相关器件
| 图片 | 型号 | 厂商 | 标准 | 分类 | 描述 |
|---|---|---|---|---|---|
|
M312L5128MT0-CA0 | Samsung semiconductor | ddr sdram registered module ( tsop-II ) 184pin registered module based on 1gb M-die with 1,200mil height & 72-bit ecc | ||
|
M312L5128MT0-CA2 | Samsung semiconductor | ddr sdram registered module ( tsop-II ) 184pin registered module based on 1gb M-die with 1,200mil height & 72-bit ecc | ||
|
M312L5128MT0-CB0 | Samsung semiconductor | ddr sdram registered module ( tsop-II ) 184pin registered module based on 1gb M-die with 1,200mil height & 72-bit ecc | ||
|
M312L5128MT0 | Samsung semiconductor | ddr sdram registered module ( tsop-II ) 184pin registered module based on 1gb M-die with 1,200mil height & 72-bit ecc | ||
|
EVB90121 | ETC | ouput power up to 200mila | ||
|
R3000 | Shanghai Lunsure Electronic Tech | 200milliamp high voltage silicon rectifier 2500to3000 volts | ||
|
R2500 | Shanghai Lunsure Electronic Tech | 200milliamp high voltage silicon rectifier 2500to3000 volts | ||
|
R2500F | Shanghai Lunsure Electronic Tech | 200milliamp high voltage fast recovery silicon rectifier 2500to3000 volts |

