|   | MN101C54 | Panasonic Semiconductor |  |  | lower limit for operation guarantee for flash memory built-in type is 4.5 V | 
    |   | MN101C62 | Panasonic Semiconductor |  |  | the lower limit for operation guarantee for flash memory built-in type is 2.5 V | 
    |   | MN101C62D | Panasonic Semiconductor |  |  | the lower limit for operation guarantee for flash memory built-in type is 2.5 V | 
    |   | MN101C62F | Panasonic Semiconductor |  |  | the lower limit for operation guarantee for flash memory built-in type is 2.5 V | 
    |   | MN101C35 | Panasonic Semiconductor |  |  | the lower limit for operation guarantee for eprom built-in type is 2.7 V | 
    |   | MN101C35D | Panasonic Semiconductor |  |  | the lower limit for operation guarantee for eprom built-in type is 2.7 V | 
    |   | MN101C54A | Panasonic Semiconductor |  |  | lower limit for operation guarantee for flash memory built-in type is 4.5 V | 
    |   | MN101C54C | Panasonic Semiconductor |  |  | lower limit for operation guarantee for flash memory built-in type is 4.5 V | 
    |   | MN101CF54D | Panasonic Semiconductor |  |  | lower limit for operation guarantee for flash memory built-in type is 4.5 V | 
    |   | MN101CP54C | Panasonic Semiconductor |  |  | lower limit for operation guarantee for flash memory built-in type is 4.5 V | 
    |   | DS26F32MJR-QML | Texas Instruments |  |  | quad differential line receivers also available guaranteed TO 100k rad(Si) tested TO mil-std-883, method 1019.5, condition A | 
    |   | DS26F32MW/883 | Texas Instruments |  |  | quad differential line receivers also available guaranteed TO 100k rad(Si) tested TO mil-std-883, method 1019.5, condition A | 
    |   | DS26F32MWG/883 | Texas Instruments |  |  | quad differential line receivers also available guaranteed TO 100k rad(Si) tested TO mil-std-883, method 1019.5, condition A | 
    |   | DS26F32MWGRQMLV | Texas Instruments |  |  | quad differential line receivers also available guaranteed TO 100k rad(Si) tested TO mil-std-883, method 1019.5, condition A | 
    |   | LM136AH | Texas Instruments |  | 半导体 | 2.5V reference diode, guaranteed TO 100k radsi tested TO mil-std-883, method 1019.5 | 
    |   | LM136AH-2.5RQV | Texas Instruments |  |  | 2.5V reference diode, guaranteed TO 100k rad(Si) tested TO mil-std-883, method 1019.5 | 
    |   | LM136AH-2.5RQML | Texas Instruments |  |  | 2.5V reference diode, guaranteed TO 100k rad(Si) tested TO mil-std-883, method 1019.5 | 
    |   | BCR10PM-12LD | Renata |  |  | triac medium power use (the product guaranteed maximum junction temperature of 150??C) | 
    |   | BCR10PM-12LD-A8 | Renata |  |  | triac medium power use (the product guaranteed maximum junction temperature of 150??C) | 
    |   | BCR10CM-12LB | Renata |  |  | triac medium power use (the product guaranteed maximum junction temperature of 150??C) |