|   | RSBK-9 | ETC |  |  | using permanent magnet, high sensitivity two poles signal relay rsb relayS | 
    |   | RSBK-9-S | ETC |  |  | using permanent magnet, high sensitivity two poles signal relay rsb relayS | 
    |   | RSBK-5-S | ETC |  |  | using permanent magnet, high sensitivity two poles signal relay rsb relayS | 
    |   | L2791-02 | Hamamatsu Corporation |  |  | small emission spot led using current confined chip | 
    |   | L2791-03 | Hamamatsu Corporation |  |  | small emission spot led using current confined chip | 
    |   | IDT77950 | ETC |  |  | switchStarTM reference design using the idt77v400 switching memory and idt77v500 switch controller | 
    |   | BGA430 | Infineon Technologies |  |  | A 35 dB gain-sloped lnb I.F. amplifier for direct broadcast satellite television applications using the bga430 & bgb540 silicon mmics | 
    |   | SDA9400 | Micronas |  |  | scan rate converter using embedded dram technology units | 
    |   | KMM5364005CKG | Samsung semiconductor |  |  | 4M x 36 dram simm using 4mx4 and 16m quad cas, 4K/2K, refresh, 5V | 
    |   | KMM5364105CKG | Samsung semiconductor |  |  | 4M x 36 dram simm using 4mx4 and 16m quad cas, 4K/2K, refresh, 5V | 
    |   | MAX3222EPN | Maxim Integrated |   | 半导体 | 3.0V to 5.5V, low-power, up to 1mbps, true RS-232 transceivers using four 0.1レF external capacitors | 
    |   | TC5565 | Toshiba Semiconductor and Storage |  |  | 65,536 bit static random access memory organized as 8,192 words by 8 bits using cmos technology | 
    |   | MAX3222EWN | Maxim Integrated |   | 半导体 | 3.0V to 5.5V, low-power, up to 1mbps, true RS-232 transceivers using four 0.1レF external capacitors | 
    |   | BUK7620-55A | Philips Semiconductors |  |  | N-channel enhancement mode field-effect power transistor in a plastic package using trenchmos technology, featuring very low on-state resistance. | 
    |   | KMM372C1600BK | Samsung semiconductor |  |  | 16m x 72 dram dimm with ecc using 16mx4, 4K 8K refresh 5V | 
    |   | KMM372C1600BS | Samsung semiconductor |  |  | 16m x 72 dram dimm with ecc using 16mx4, 4K 8K refresh 5V | 
    |   | KMM372C1680BK | Samsung semiconductor |  |  | 16m x 72 dram dimm with ecc using 16mx4, 4K 8K refresh 5V | 
    |   | KMM372C1680BS | Samsung semiconductor |  |  | 16m x 72 dram dimm with ecc using 16mx4, 4K 8K refresh 5V | 
    |   | KMM372C213CK | Samsung semiconductor |  |  | 2M x 72 dram dimm with ecc using 2mx8, 2K refresh, 5V | 
    |   | KMM372C213CS | Samsung semiconductor |  |  | 2M x 72 dram dimm with ecc using 2mx8, 2K refresh, 5V |