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RSBL-6-S |
ETC |
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using permanent magnet, high sensitivity two poles signal relay rsb relayS |
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L2791 |
Hamamatsu Corporation |
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small emission spot led using current confined chip |
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KMM5324100CK |
Samsung semiconductor |
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4M x 32 dram simm using 4mx4, 4K/2K refresh, 5V |
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KMM5324104CK |
Samsung semiconductor |
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4M x 32 dram simm using 4mx4, 4K/2K refresh, 5V |
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KMM5322200C2W |
Samsung semiconductor |
|
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2M x 32 dram simm using 1mx16, 1K refresh, 5V |
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KMM5322200C2WG |
Samsung semiconductor |
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2M x 32 dram simm using 1mx16, 1K refresh, 5V |
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KMM5322204C2W |
Samsung semiconductor |
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2M x 32 dram simm using 1mx16 , 1K refresh, 5V |
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KMM5322204C2WG |
Samsung semiconductor |
|
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2M x 32 dram simm using 1mx16 , 1K refresh, 5V |
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KMM53632000BK |
Samsung semiconductor |
|
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32m x 36 dram simm using 16mx4 & 16mx1, 4K refresh, 5V |
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KMM53632000CK |
Samsung semiconductor |
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32m x 36 dram simm using 16mx4 & 16mx1, 4K refresh, 5V |
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KMM53632004BK |
Samsung semiconductor |
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32m x 36 dram simm using 16mx4 & 16mx1 4K refresh, 5V |
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KMM53632004CK |
Samsung semiconductor |
|
|
32m x 36 dram simm using 16mx4 & 16mx1 4K refresh, 5V |
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KMM5361203C2W |
Samsung semiconductor |
|
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1M x 36 dram simm using 1mx16 and 1mx4 quad cas, 1K refresh |
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KMM5361203C2WG |
Samsung semiconductor |
|
|
1M x 36 dram simm using 1mx16 and 1mx4 quad cas, 1K refresh |
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KMM5364103CK |
Samsung semiconductor |
|
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4M x 36 dram simm using 4mx4 and 16m quad cas, 4K/2K refresh, 5V |
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KMM53232000BK |
Samsung semiconductor |
|
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32m x 32 dram simm using 16mx4, 4K refresh, 5V |
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KMM53232000CK |
Samsung semiconductor |
|
|
32m x 32 dram simm using 16mx4, 4K refresh, 5V |
|
KMM53232004BK |
Samsung semiconductor |
|
|
32m x 32 dram simm using 16mx4, 4K refresh, 5V |
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KMM53232004CK |
Samsung semiconductor |
|
|
32m x 32 dram simm using 16mx4, 4K refresh, 5V |
|
MAX3232CWE |
Maxim Integrated |
  |
半导体
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3.0V to 5.5V, low-power, up to 1mbps, true RS-232 transceivers using four 0.1レF external capacitors |