关键词nec
标准
为您共找出"500+"个相关器件
图片 型号 厂商 标准 分类 描述
Image: MC100EP91 MC100EP91 ON Semiconductor 半导体 2.5 V/3.3 V any level positive input to -3.3 V/-5.5 V necl output translator
Image: MC100EP91DW MC100EP91DW ON Semiconductor 2.5 V/3.3 V any level positive input to -3.3 V/-5.5 V necl output translator
Image: MC100EP91DWR2 MC100EP91DWR2 ON Semiconductor 2.5 V/3.3 V any level positive input to -3.3 V/-5.5 V necl output translator
Image: MC100EP91MN MC100EP91MN ON Semiconductor 半导体 2.5 V/3.3 V any level positive input to -3.3 V/-5.5 V necl output translator
Image: MC100EP91MNR2 MC100EP91MNR2 ON Semiconductor 2.5 V/3.3 V any level positive input to -3.3 V/-5.5 V necl output translator
Image: NCL30030 NCL30030 ON Semiconductor 嵌入式解决方案 评估板 -  LED 驱动器 this combination IC integrates power factor correction (pfc) and quasiresonant flyback functionality necessary to implement a compact and highly efficient led driver for high performance led lighting applications.
Image: MS5637 DIGILENT PMOD MS5637 DIGILENT PMOD TE Connectivity 传感器,变送器 湿度传感器 the ms5637 peripheral module provides the necessary hardware tointerface the ms5637 digital barometric pressure and temperaturesensor to any system that utilizes a digilent pmodcompatibleexpansion ports configurable for i2c communication.
Image: 3634100 3634100 Wakefield 附件 卡片支架 backplanes can be mounted directly on the rear horizontal rails. isolating strips are not necessary
Image: 09140012734 09140012734 HARTING 连接器 D-Sub连接器 suitable for the connection of standard power cables even with large cross-sections (no special cables with reduced PE necessary)
Image:       MC100LVEL32 MC100LVEL32 ON Semiconductor 集成电路 时钟/计时 - 专用 510ps传播延迟 2.6 ghz典型最大频率 esd保护:>4 KV hbm,>200 V MM 100系列包含温度补偿 pecl模式工作范围:vcc=3.0 V至3.8 V,V E=0 V necl模式工作范围:vcc=0 V,V形=-3.0 V至-3.8 V 内部输入下拉电阻器 符合或超过jedec规范eia/Jesd78 IC闭锁试验 湿敏等级1 有关更多信息,请参阅应用说明和8003/D 可燃性等级:UL-94代码V-0@1/8“,氧指数28至34 晶体管计数=111个设备 提供无铅包装
Image: NE5511279A NE5511279A NEC necs 7.5 V uhf band RF power silicon LD-mos fet
Image: NE5511279A-T1 NE5511279A-T1 NEC necs 7.5 V uhf band RF power silicon LD-mos fet
Image: NE5511279A-T1A NE5511279A-T1A NEC necs 7.5 V uhf band RF power silicon LD-mos fet
Image: NE5520279A NE5520279A NEC necs 3.2 V, 2 W, L&S band medium power silicon LD-mosfet
Image: NE5520279A-T1 NE5520279A-T1 NEC necs 3.2 V, 2 W, L&S band medium power silicon LD-mosfet
Image: NE5520379A NE5520379A California Eastern Labs necs 3.2V, 3W, L/S band medium power silicon LD-mosfet
Image: NE5520379A-T1A-A NE5520379A-T1A-A California Eastern Labs necs 3.2V, 3W, L/S band medium power silicon LD-mosfet
Image: NE552R479A NE552R479A California Eastern Labs necs 3.0 V, 0.25 W L&S-band medium power silicon LD-mosfet
Image: NE552R479A-T1A-A NE552R479A-T1A-A California Eastern Labs necs 3.0 V, 0.25 W L&S-band medium power silicon LD-mosfet
Image: UPC1688 UPC1688 NEC necs 1.0 ghz bandwidth silicon mmic amplifier