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MC100EP91 |
ON Semiconductor |
  |
半导体
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2.5 V/3.3 V any level positive input to -3.3 V/-5.5 V necl output translator |
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MC100EP91DW |
ON Semiconductor |
|
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2.5 V/3.3 V any level positive input to -3.3 V/-5.5 V necl output translator |
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MC100EP91DWR2 |
ON Semiconductor |
|
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2.5 V/3.3 V any level positive input to -3.3 V/-5.5 V necl output translator |
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MC100EP91MN |
ON Semiconductor |
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半导体
|
2.5 V/3.3 V any level positive input to -3.3 V/-5.5 V necl output translator |
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MC100EP91MNR2 |
ON Semiconductor |
|
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2.5 V/3.3 V any level positive input to -3.3 V/-5.5 V necl output translator |
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NCL30030 |
ON Semiconductor |
|
嵌入式解决方案
评估板 - LED 驱动器
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this combination IC integrates power factor correction (pfc) and quasi−resonant flyback functionality necessary to implement a compact and highly efficient led driver for high performance led lighting applications. |
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MS5637 DIGILENT PMOD |
TE Connectivity |
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传感器,变送器
湿度传感器
|
the ms5637 peripheral module provides the necessary hardware tointerface the ms5637 digital barometric pressure and temperaturesensor to any system that utilizes a digilent pmod™ compatibleexpansion ports configurable for i2c communication. |
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3634100 |
Wakefield |
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附件
卡片支架
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backplanes can be mounted directly on the rear horizontal rails. isolating strips are not necessary |
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09140012734 |
HARTING |
|
连接器
D-Sub连接器
|
suitable for the connection of standard power cables even with large cross-sections (no special cables with reduced PE necessary) |
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MC100LVEL32 |
ON Semiconductor |
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集成电路
时钟/计时 - 专用
|
510ps传播延迟 2.6 ghz典型最大频率 esd保护:>4 KV hbm,>200 V MM 100系列包含温度补偿 pecl模式工作范围:vcc=3.0 V至3.8 V,V E=0 V necl模式工作范围:vcc=0 V,V形=-3.0 V至-3.8 V 内部输入下拉电阻器 符合或超过jedec规范eia/Jesd78 IC闭锁试验 湿敏等级1 有关更多信息,请参阅应用说明和8003/D 可燃性等级:UL-94代码V-0@1/8“,氧指数28至34 晶体管计数=111个设备 提供无铅包装 |
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NE5511279A |
NEC |
|
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necs 7.5 V uhf band RF power silicon LD-mos fet |
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NE5511279A-T1 |
NEC |
|
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necs 7.5 V uhf band RF power silicon LD-mos fet |
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NE5511279A-T1A |
NEC |
|
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necs 7.5 V uhf band RF power silicon LD-mos fet |
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NE5520279A |
NEC |
|
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necs 3.2 V, 2 W, L&S band medium power silicon LD-mosfet |
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NE5520279A-T1 |
NEC |
|
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necs 3.2 V, 2 W, L&S band medium power silicon LD-mosfet |
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NE5520379A |
California Eastern Labs |
|
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necs 3.2V, 3W, L/S band medium power silicon LD-mosfet |
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NE5520379A-T1A-A |
California Eastern Labs |
|
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necs 3.2V, 3W, L/S band medium power silicon LD-mosfet |
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NE552R479A |
California Eastern Labs |
|
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necs 3.0 V, 0.25 W L&S-band medium power silicon LD-mosfet |
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NE552R479A-T1A-A |
California Eastern Labs |
|
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necs 3.0 V, 0.25 W L&S-band medium power silicon LD-mosfet |
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UPC1688 |
NEC |
|
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necs 1.0 ghz bandwidth silicon mmic amplifier |