图片 |
型号 |
厂商 |
标准 |
分类 |
描述 |
|
DRV2603RUNR |
Texas Instruments |
  |
半导体
集成电路 - IC
|
motor / motion / ignition controllers & drivers haptic driver w/auto resonance tracking |
|
DRV2603RUNT |
Texas Instruments |
  |
半导体
集成电路 - IC
|
motor / motion / ignition controllers & drivers haptic driver w/auto resonance tracking |
|
GT40Q323_06 |
Toshiba Semiconductor and Storage |
|
|
silicon N channel igbt voltage resonance inverter switching application |
|
AN8038 |
Panasonic Semiconductor |
|
|
AC-DC switching power supply control IC with rcc local resonance circuit for improved conformance with energy conservation laws |
|
AN8029 |
Panasonic Semiconductor |
|
|
self-excited rcc pseudo-resonance type AC-DC switching power supply control IC |
|
AN8038S |
Panasonic Semiconductor |
|
|
AC-DC switching power supply control IC with rcc local resonance circuit for improved conformance with energy conservation laws |
|
AN8026 |
Panasonic Semiconductor |
|
|
self-excited rcc pseudo-resonance type AC-DC switching power supply control IC |
|
AN8028 |
Panasonic Semiconductor |
|
|
self-excited rcc pseudo-resonance type AC-DC switching power supply control IC |
|
GT40Q322 |
Toshiba Semiconductor and Storage |
|
|
voltage resonance inverter switching application |
|
GT40T301_06 |
Toshiba Semiconductor and Storage |
|
|
silicon N channel igbt parallel resonance inverter switching applications |
|
GT40Q321_06 |
Toshiba Semiconductor and Storage |
|
|
silicon N channel iegt voltage resonance inverter switching application |
|
GT40Q321 |
Toshiba Semiconductor and Storage |
|
|
silicon N channel iegt voltage resonance inverter switching application |
|
GT40Q323 |
Toshiba Semiconductor and Storage |
|
|
silicon N channel igbt voltage resonance inverter switching application |
|
GT50J122 |
Toshiba Semiconductor and Storage |
|
|
current resonance inverter switching application |
|
GT30J122 |
Toshiba Semiconductor and Storage |
|
|
4th generation igbt current resonance inverter switching |
|
GT50J327 |
Toshiba Semiconductor and Storage |
|
|
toshiba insulated gate bipolar transistor silicon N channel igbt current resonance inverter switching application |
|
GT60N322 |
Toshiba Semiconductor and Storage |
|
|
silicon N channel igbt voltage resonance inverter switching application |
|
GT60M323 |
Toshiba Semiconductor and Storage |
|
|
silicon N channel igbt voltage resonance inverter switching application |
|
GT60M323_06 |
Toshiba Semiconductor and Storage |
|
|
silicon N channel igbt voltage resonance inverter switching application |
|
MR2900 |
Shindengen Electric Mfg.Co.Ltd |
|
|
provision for standby mode operation partial resonance power supply IC module |